Masaaki Furukawa

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Speaker, Author, Co-Author

Sat. Mar 17, 2018 4:00 PM - 6:00 PM P12 (P)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

4:00 PM - 6:00 PM

△ [17p-P12-6] Effect of High Pressure Water Vapor Annealing Condition for SiO₂/n-GaN Interface

〇Masaaki Furukawa^1,2, Uenuma Mutsunori², Fujimoto Yuta², Ishikawa Yasuaki², Yasuda Masahiro¹, Uraoka Yukiharu² (1.Osaka Pref. Univ., 2.NAIST)