DAEHWAN AHN

→ Search for DAEHWAN AHN in Google Scholar

Speaker, Author, Co-Author

Sat. Mar 17, 2018 1:30 PM - 3:30 PM P8 (P)

Poster presentation
| 13 Semiconductors
| 13.5 Semiconductor devices and related technologies

[17p-P8-1~24] 13.5 Semiconductor devices and related technologies

1:30 PM - 3:30 PM

[17p-P8-7] Effects of W/ZrO₂/Al₂O₃ gate stack on the performance of InGaAs TFET with Zn-diffused source

〇(D)DAEHWAN AHN¹, SANGHEE YOON¹, MITSURU TAKENAKA¹, SHINICHI TAKAGI¹ (1.The Univ. of Tokyo)