Yuto Ando

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Speaker, Author, Co-Author

Sun. Mar 18, 2018 9:00 AM - 12:15 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18a-C302-1~12] 13.7 Compound and power electron devices and process technology

9:15 AM - 9:30 AM

△ [18a-C302-2] Metal work function dependence of Schottky barrier height fabricated on m-plane GaN.

〇Yuto Ando¹, Kentaro Nagamatsu², Atsushi Tanaka^2,3, Shigeyoshi Usami¹, Ousmane 1 Barry¹, Manato Deki², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NIMS, 4.Nagoya Univ. ARC, 5.Nagoya Univ. VBL)

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