Yoshihiro Ueoka

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Speaker, Author, Co-Author

Sun. Mar 18, 2018 9:00 AM - 12:15 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18a-C302-1~12] 13.7 Compound and power electron devices and process technology

10:45 AM - 11:00 AM

[18a-C302-7] Improvement of Breakdown Voltage of Vertical GaN Diode by Ga₂O₃Passivation

〇Yoshihiro Ueoka¹, Manato Deki², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Idemitsu Kosan, 2.Nagoya Univ. IMaSS, 3.Nagoya Univ. ARC, 4.Nagoya Univ. VBL)