Tomokazu Nagao

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Speaker, Author, Co-Author

Mon. Mar 19, 2018 9:15 AM - 11:45 AM C101 (52-101)

Oral presentation
| 13 Semiconductors
| 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[19a-C101-1~10] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

10:30 AM - 10:45 AM

[19a-C101-6] H+ ion implantation used to reduce temperature for activating B atoms implanted in silicon

〇Tomokazu Nagao¹, Yutaka Inouchi¹, Junichi Tatemichi¹, Keisuke Yasuta², Takuma Uehara², Masahiko Hasumi², Toshiyuki Sameshima² (1.NISSIN ION EQUIPMENT, 2.TUAT)

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