Nobuhiro Yoshimura

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Speaker, Author, Co-Author

Tue. Mar 20, 2018 1:00 PM - 4:00 PM E201 (57-201)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:30 PM - 2:45 PM

[20p-E201-6] Epitaxial Lateral Overgrowth of α-Ga₂O₃ on Sapphire Substrates by Mist-CVD Method

〇(B)Nobuhiro Yoshimura¹, Riena Jinno², Kentaro Kaneko², Shizuo Fujita² (1.Kyoto Univ., 2.Kyoto univ.)