Takeshi Nishida

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Speaker, Author, Co-Author

Tue. Mar 20, 2018 1:30 PM - 3:45 PM F214 (61-214)

Oral presentation
| 15 Crystal Engineering
| 15.5 Group IV crystals and alloys

[20p-F214-1~9] 15.5 Group IV crystals and alloys

1:45 PM - 2:00 PM

[20p-F214-2] Formation of a large-grained thick Ge film using Al-induced crystallized Ge as a seed layer

〇Takeshi Nishida¹, Mitsuki Nakata¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)