Session information

Oral presentation

13 Semiconductors » 13.9 Compound solar cells

[17a-F310-1~11] 13.9 Compound solar cells

Sat. Mar 17, 2018 9:00 AM - 12:00 PM F310 (61-310)

Hisashi Miyazaki(National Defense Academy)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
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9:00 AM - 9:15 AM

[17a-F310-1] Effects of heat-bias-soaking on NaF-treated CIGS thin film solar cells

〇(M1)Junpei Matsuura¹, Kosuke Shudo¹, Ishwor Khatri², Mutsumi Sugiyama^1,2, Tokio Nakada² (1.Faculty of Sci. and Tech. / Tokyo Univ. of Sci., 2.RIST / Tokyo Univ. of Sci.)

9:15 AM - 9:30 AM

[17a-F310-2] Effect of heat-bias-soaking on CsF-treated CIGS thin film solar cells

〇(P)Ishwor Khatri¹, Junpei Matsuura², Yuta Ando², Kosuke Shudo², Mutsumi Sugiyama^1,2, Tokio Nakada¹ (1.RIST/Tokyo Univ. of Sci., 2.Faculty of Sci. and Tech./Tokyo Univ. of Sci.)

9:30 AM - 9:45 AM

[17a-F310-3] Effects of positive bias at high temperature on CIGS solar cells with KF-PDT

〇Jiro Nishinaga¹, Takashi Koida¹, Shinho Kim¹, Shogo Ishizuka¹, Yukiko Kamikawa¹, Hajime Shibata¹, Shigeru Niki¹ (1.AIST)

9:45 AM - 10:00 AM

[17a-F310-4] Characterization of electronic structure of the interface between CdS buffer and KF-treated Cu(In,Ga)(S,Se)₂ absorber

〇Norio Terada¹, Suehiro Kawamura¹, Yuya Iwamoto¹, Kohei Tanigawa¹, Takuya Kato², Hironori Sugimoto², Hajime Shibata³, Koji Matsubara³, Shigeru Niki³ (1.Kagoshima Univ., 2.Solar Frontier K. K., 3.AIST)

10:00 AM - 10:15 AM

[17a-F310-5] Recombination analysis of Cu(In,Ga)(S,Se)₂solar cells using monochromatic incident light

〇(M1)Jingdong Chen¹, Shenghao Wang¹, Xia Hao¹, M.M. Islam¹, Takuya Kato², Hiroki Sugimoto², Katsuhiro Akimoto¹, Takeaki Sakurai¹ (1.Univ.Tsukuba, 2.Solar Frontier)

10:30 AM - 10:45 AM

[17a-F310-6] Analysis of recombination in Cu(In,Ga)Se₂ based solar cell with graded bandgap Ⅱ

〇(M2)Yuta Ando¹, Shenghao Wang¹, Jingdong Chen¹, Muhammad Monirul Islam¹, Shogo Ishizuka², Hajime Shibata², Katsuhiro Akimoto¹, Takeaki Sakurai¹ (1.Univ. of Tsukuba, 2.AIST)

10:45 AM - 11:00 AM

[17a-F310-7] Epitaxial growth of Cu(In, Ga)Se₂ thin layers on GaAs substrates by MBE

〇Jiro Nishinaga¹, Takehiko Nagai¹, Takeyoshi Sugaya¹, Shigeru Niki¹ (1.AIST)

11:00 AM - 11:15 AM

[17a-F310-8] Site-Selective doping of Zn in Cu(In,Ga)Se₂ Thin Films and Solar Cell Characteristics

〇Sho Shirakata¹ (1.Ehime Univ.)

11:15 AM - 11:30 AM

△ [17a-F310-9] Controlling of donor concentration of CdS buffer layer for Cu(In,Ga)Se₂ solar cells

〇(B)Takahiro Hayakawa¹, Takahito Nishimura², Hiroki Sugiura³, Kazuyoshi Nakada³, Akira Yamada³ (1.School of Tokyo Tech., 2.Graduate school of Tokyo Tech., 3.Tokyo Tech)

11:30 AM - 11:45 AM

[17a-F310-10] First principles studies on interfaces between absorber and Mo back contact layers in Cu(In,Ga)Se₂ and Cu₂ZnSn(S,Se)₄ solar cells

〇(PC)Akio Shigemi¹, Takahiro Wada¹ (1.Ryukoku Univ.)

11:45 AM - 12:00 PM

[17a-F310-11] Deposition of CuGaS₂ thin films deposited by magnetron sputtering

〇(M1)Hiroya Matsubayashi¹, Nazmul Ahsan², Kim Myeongok³, Yoshitaka Okada^1,2 (1.Elec. Eng. UTokyo, 2.RCAST UTokyo, 3.Col. Arts and Sci. UTokyo)

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