Symposium (Oral)
Symposium » Progress of compound semiconductor device technologies: what can learn from history of GaAs device development
Sat. Mar 17, 2018 1:15 PM - 4:20 PM E201 (57-201)
Masashi Kato(NITech), Taketomo Sato(Hokkaido Univ.)
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▲：英語発表
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1:15 PM - 1:20 PM
〇Kenji Shiojima1 (1.Univ. of Fukui)
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1:20 PM - 1:50 PM
〇Tomoyoshi Mishima1 (1.Hosei Univ.)
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1:50 PM - 2:20 PM
〇Kenji Shiojima1 (1.Univ. of Fukui)
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2:20 PM - 2:50 PM
〇Tsuyoshi Takahashi1,2, Kozo Makiyama1,2 (1.Fujitsu Labs., 2.Fujitsu)
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2:50 PM - 3:20 PM
〇Minoru Ida1, Yuta Shiratori1 (1.NTT Device Technology Labs)
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3:20 PM - 3:50 PM
〇Takeshi Tanaka1 (1.SCIOCS Co. Ltd.)
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3:50 PM - 4:20 PM
〇Yoshiyuki Yonezawa1 (1.AIST)
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