Poster presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[18p-P6-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 18, 2018 1:30 PM - 3:30 PM P6 (P)

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1:30 PM - 3:30 PM

[18p-P6-1] Effect of annealing on electrical properties of Mg₂Si crystals (II)

〇(B)Takuma Ishikawa¹, Kohei Nakano¹, Yoshiaki Hara², Haruhiko Udono¹ (1.Ibaraki Univ., 2.Ibaraki College of Tech.)

1:30 PM - 3:30 PM

[18p-P6-2] Relationship between carrier density and IR absorption of annealed Mg₂Si crystals(Ⅱ)

〇(M1)Fuko Yaguchi¹, Kohei Nakano¹, Takuma Ishikawa¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

1:30 PM - 3:30 PM

[18p-P6-3] Effect of impurity on oxidation characteristics of melt grown Mg₂Si (II)

〇(B)Dai Kaneda¹, Shu Konno¹, Ryujyou Sugahara¹, Haruhiko Udono¹ (1.Ibaraki University)

1:30 PM - 3:30 PM

[18p-P6-4] Electrical characteristics of Mg₂Si mesa-PD’s fabricated under various RTD process

〇Fumiya Takahashi¹, Tatsuya Nakano¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

1:30 PM - 3:30 PM

[18p-P6-5] Low-Temperature Photoresponsivity of Mg₂Si mesa-PD's with ring electrode

〇Daisuke Niioka¹, Yuma Onizawa¹, Misa Yoshida², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

1:30 PM - 3:30 PM

[18p-P6-6] Attempts to synthesize of (OsFe)Si₂ by Czochralski method

〇Takachika Isomae¹, Tetsu Sugaya¹, Shouta Okazaki¹, Keisuke Sato¹, Hirohumi Kawanaka², Yoshiaki Hara¹ (1.NIT, Ibaraki College, 2.AIST)

1:30 PM - 3:30 PM

[18p-P6-7] Optimization of donor activation conditions in Sb-doped β-FeSi₂ epitaxial films

〇Hajime Eguchi¹, Motoki Iinuma¹, Hirofumi Hoshida¹, Naoki Murakoso¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

1:30 PM - 3:30 PM

[18p-P6-8] Dependence of 1.5 μm PL on Si substrate orientation in Si/β-FeSi₂/Si stacked structures

〇Shuya Ikeda¹, Naohiro Oka¹, Kazuya Ogi¹, Kenta Setojima¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

1:30 PM - 3:30 PM

[18p-P6-9] Growth of CaSi₂ Layer on Si(111) Substrate by MBE

〇Kenji Ito¹, Tetsu Ohsuna¹, Hideyuki Nakano¹, Takashi Suemasu² (1.TOYOTA CRDL, INC., 2.Univ. Tsukuba)

1:30 PM - 3:30 PM

▲ [18p-P6-10] Surface passivation effect of RF-plasma processed a-Si:H layers
on the optical properties of BaSi₂ epitaxial films

〇(M2)Zhihao Xu¹, Kazuhiro Gotoh², Tianguo Deng¹, Kaoru Toko¹, Noritaka Usami², Takashi Suemasu¹ (1.Univ Tsukuba, 2.Nagoya Univ)

1:30 PM - 3:30 PM

[18p-P6-11] Modification of Si-based Nanosheets by Metal Chloride Treatment

Kazuma Konishi¹, Yuya Kujime¹, Tsubasa Kato¹, Yuki Kumazawa², Naohisa Takahashi³, Naoki Nanba³, 〇Hirokazu Tatsuoka² (1.Fac. Eng., Shizuoka Univ., 2.Grad. Sch. Integr. Sci. & Technol., Dept. Eng., Shizuoka Univ., 3.Yamaha Central Research Lab.)

1:30 PM - 3:30 PM

[18p-P6-12] Synthesis of Nanostructures from Oxide Powders in Acid Solution

Shinya Kusasaki¹, Naohisa Takahashi², Naoki Nanba², 〇Hirokazu Tatsuoka¹ (1.Grad. Sch. Integr. Sci. & Technol., Dept. Eng., Shizuoka Univ., 2.Yamaha Central Research Lab.)

1:30 PM - 3:30 PM

[18p-P6-13] Measurement of time resolution photothermal divergences signal on Nitrogen-dopede SiC

〇Shinya Takeichi¹, Shintaro Harada¹, Shun Kamada², Weiwei Xu¹, Takanori Kozai¹, Takeshi Fujihara¹, Tao Zheng¹, Nobutomo Uehara³, Tomoya Konishi¹, Masaru Kamano¹ (1.NIT Anan College, 2.Tokushima Univ., 3.NIT)

1:30 PM - 3:30 PM

[18p-P6-14] Evaluation of valence band offset of atomically-thin CaF₂/Si heterointerface

〇Satoshi Fukuyama¹, Masahiro Watanabe¹ (1.Tokyo Tech.)

1:30 PM - 3:30 PM

[18p-P6-15] Evaluation of lattice displacement and residual hydrogen in GaN by rutherford backscattering and elastic recoil detection analysis

〇Kazuki Sato¹, Kazumasa Kushida², Tomoaki Nishimura¹, Kazuo Kuriyama¹, Toru Nakamura¹ (1.Hosei Univ., 2.Osakakyoiku Univ.)

1:30 PM - 3:30 PM

[18p-P6-16] Evaluation of lattice displacement of Zn-ion implanted GaN single crystal by Rutherford backscattering

〇Kyouhei Kubota¹, Nishimura Tomoaki¹, Kuriyama Kazuo¹, Nakamura Tohru¹ (1.Hosei Univ.)

1:30 PM - 3:30 PM

[18p-P6-17] Simulation of TOF transient currents by the CIP method

〇Yoshitaka Mishima¹, Takahiro Masuda¹, Kazuhiko Suzuki¹, Satoru Seto² (1.HUS, 2.NIT, Ishikawa Coll.)

1:30 PM - 3:30 PM

[18p-P6-18] Estimating material properties in machine learning and first principles

〇Kazuki Mori¹, Masahito Segawa¹ (1.ITOCHU Techno-Solutions Corp.)

Session information

[18p-P6-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

[18p-P6-1] Effect of annealing on electrical properties of Mg₂Si crystals (II)

[18p-P6-2] Relationship between carrier density and IR absorption of annealed Mg₂Si crystals(Ⅱ)

[18p-P6-3] Effect of impurity on oxidation characteristics of melt grown Mg₂Si (II)

[18p-P6-4] Electrical characteristics of Mg₂Si mesa-PD’s fabricated under various RTD process

[18p-P6-5] Low-Temperature Photoresponsivity of Mg₂Si mesa-PD's with ring electrode

[18p-P6-6] Attempts to synthesize of (OsFe)Si₂ by Czochralski method

[18p-P6-7] Optimization of donor activation conditions in Sb-doped β-FeSi₂ epitaxial films

[18p-P6-8] Dependence of 1.5 μm PL on Si substrate orientation in Si/β-FeSi₂/Si stacked structures

[18p-P6-9] Growth of CaSi₂ Layer on Si(111) Substrate by MBE

▲ [18p-P6-10] Surface passivation effect of RF-plasma processed a-Si:H layers
on the optical properties of BaSi₂ epitaxial films

[18p-P6-11] Modification of Si-based Nanosheets by Metal Chloride Treatment

[18p-P6-12] Synthesis of Nanostructures from Oxide Powders in Acid Solution

[18p-P6-13] Measurement of time resolution photothermal divergences signal on Nitrogen-dopede SiC

[18p-P6-14] Evaluation of valence band offset of atomically-thin CaF₂/Si heterointerface

[18p-P6-15] Evaluation of lattice displacement and residual hydrogen in GaN by rutherford backscattering and elastic recoil detection analysis

[18p-P6-16] Evaluation of lattice displacement of Zn-ion implanted GaN single crystal by Rutherford backscattering

[18p-P6-17] Simulation of TOF transient currents by the CIP method

[18p-P6-18] Estimating material properties in machine learning and first principles

Authentication

Session information

[18p-P6-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [18p-P6-10] Surface passivation effect of RF-plasma processed a-Si:H layerson the optical properties of BaSi2 epitaxial films

Authentication

▲ [18p-P6-10] Surface passivation effect of RF-plasma processed a-Si:H layers
on the optical properties of BaSi₂ epitaxial films