[19a-G203-1~9] 13.5 Semiconductor devices and related technologies

Mon. Mar 19, 2018 9:00 AM - 12:00 PM G203 (63-203)

Masaharu Kobayashi(Univ. of Tokyo), Tetsuo Endoh(Tohoku Univ.)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
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9:00 AM - 9:15 AM

[19a-G203-1] Suppression of channel shortening effect for InGaZnO Thin-Film-Transistor by In-Sn-O source/drain electrodes

〇Junji Kataoka¹, Nobuyoshi Saito¹, Tomomasa Ueda¹, Tsutomu Tezuka¹, Tomoaki Sawabe¹, Keiji Ikeda¹ (1.Toshiba memory corp.)

9:15 AM - 9:30 AM

[19a-G203-2] Origin of High Electron Mobility in InSnZnO MOSFETs

〇Nobuyoshi Saito¹, Tomomasa Ueda¹, Tsutomu Tezuka¹, Keiji Ikeda¹ (1.Toshiba Memory Corp.)

9:30 AM - 9:45 AM

[19a-G203-3] Silicon Tunnel Field-Effect Transistors as Spin Qubits

〇Takahiro Mori¹, Satoshi Moriyama², Takashi Matsukawa¹, Tetsuji Yasuda¹, Keiji Ono³ (1.AIST, 2.NIMS, 3.RIKEN)

9:45 AM - 10:00 AM

[19a-G203-4] Fabrication and characterization of quantum dots on a boron-heavily-doped silicon-on-insulator substrate

〇Seiya Mizoguchi¹, Naoki Shimatani¹, Mizuki Kobayashi¹, Takaomi Makino¹, Yu Yamaoka¹, Tetsuo Kodera¹ (1.Tokyo Tech.)

10:15 AM - 10:30 AM

[19a-G203-5] [Award Ceremony] The 9th Silicon Technology Division Award

〇Tetsuro Endo¹ (1.Silicon Technology Division)

10:30 AM - 11:00 AM

[19a-G203-6] [The 9th Silicon Technology Division Award Speech] Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements

〇Michihiro Yamada¹, Makoto Tsukahara¹, Yuichi Fujita¹, Takahiro Naito¹, Shinya Yamada^1,2, Kentarou Sawano³, Kohei Hamaya^1,2 (1.Osaka Univ., 2.Cntr for Spintronics Rsch Net,Osaka Univ., 3.Tokyo City Univ.)

11:00 AM - 11:30 AM

[19a-G203-7] [The 9th Silicon Technology Division Award Speech] Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

〇Jaehoon Han^1,2, Frederic Boeuf¹, Junichi Fujikata³, Shigeki Takahashi³, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.Univ. of Tokyo, 2.KIST, 3.PETRA)

11:30 AM - 11:45 AM

[19a-G203-8] [The 9th Silicon Technology Division Award Speech] Ultrahigh-Q photonic crystal nanocavities fabricated by CMOS process technologies

〇Kohei Ashida¹ (1.Osaka Pref. Univ.)

11:45 AM - 12:00 PM

[19a-G203-9] [The 9th Silicon Technology Division Award Speech] Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet

〇Iriya Muneta¹ (1.Titech)

Session information