Nobuyoshi Saito

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Speaker, Author, Co-Author

Mon. Mar 19, 2018 9:00 AM - 12:00 PM G203 (63-203)

Oral presentation
| 13 Semiconductors
| 13.5 Semiconductor devices and related technologies

[19a-G203-1~9] 13.5 Semiconductor devices and related technologies

9:15 AM - 9:30 AM

[19a-G203-2] Origin of High Electron Mobility in InSnZnO MOSFETs

〇Nobuyoshi Saito¹, Tomomasa Ueda¹, Tsutomu Tezuka¹, Keiji Ikeda¹ (1.Toshiba Memory Corp.)