[20a-F210-1~6] 15.2 II-VI and related compounds

Tue. Mar 20, 2018 9:00 AM - 10:30 AM F210 (61-210)

△：奨励賞エントリー
▲：英語発表
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9:00 AM - 9:15 AM

[20a-F210-1] Wettability Improvement of Cu₂Te buffer layer and preparation of CuGaTe₂ Thin Films

〇Aya Uruno¹, Yohei Sakurakawa¹, MasaKazu Kobayashi^1,2 (1.Waseda Univ. Dept. of Elec. Eng. and Biosci., 2.Kagami Mem. Res. Inst. for Mat. Sci. & Technol.)

9:15 AM - 9:30 AM

[20a-F210-2] Phosphorus doping of ZnTe grown by MBE

〇Kento Matsuo¹, Yusuke Watanabe¹, Shuji Tsutsumi¹, Tooru Tanaka¹, Katsuhiko Saito¹, Qixin Guo¹, Yoshitaro Nose² (1.Saga Univ., 2.Kyoto Univ.)

9:30 AM - 9:45 AM

[20a-F210-3] Annealing strudy of MOVPE-grown (211)CdTe/Si layers

〇Takuro Mori¹ (1.nitech)

9:45 AM - 10:00 AM

[20a-F210-4] Gamma-ray irradiation effects of CdTe/CdS photodiode for radiation tolerant FEA image sensor

〇Tamotsu Okamoto¹, Tomoya Igari¹, Takahiro Fukui¹, Yasuhito Gotoh², Nobuhiro Sato², Masafumi Akiyoshi³, Ikuji Takagi² (1.NIT, Kisarazu Coll., 2.Kyoto Univ., 3.Osaka Pref. Univ.)

10:00 AM - 10:15 AM

[20a-F210-5] Observation of Absorption Edge and Electronic Structure Calculation of Rocksalt-structured Mg_xZn_1-xO

〇Takeyoshi Onuma¹, Mizuki Ono¹, Kyohei Ishii², Kentaro Kaneko², Tomohiro Yamaguchi¹, Shizuo Fujita², Tohru Honda¹ (1.Kogakuin Univ., 2.Kyoto Univ.)

10:15 AM - 10:30 AM

△ [20a-F210-6] Temperature and Excitation Density Dependence of Deep Ultraviolet Cathodoluminescence in Rocksalt-structured Mg_xZn_1-xO

〇Mizuki Ono¹, Kyohei Ishii², Kentaro Kaneko², Tomohiro Yamaguchi¹, Tohru Honda¹, Shizuo Fujita², Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.Kyoto Univ.)

Session information

[20a-F210-1~6] 15.2 II-VI and related compounds

[20a-F210-1] Wettability Improvement of Cu₂Te buffer layer and preparation of CuGaTe₂ Thin Films

[20a-F210-2] Phosphorus doping of ZnTe grown by MBE

[20a-F210-3] Annealing strudy of MOVPE-grown (211)CdTe/Si layers

[20a-F210-4] Gamma-ray irradiation effects of CdTe/CdS photodiode for radiation tolerant FEA image sensor

[20a-F210-5] Observation of Absorption Edge and Electronic Structure Calculation of Rocksalt-structured Mg_xZn_1-xO

△ [20a-F210-6] Temperature and Excitation Density Dependence of Deep Ultraviolet Cathodoluminescence in Rocksalt-structured Mg_xZn_1-xO

Authentication

Session information

[20a-F210-1~6] 15.2 II-VI and related compounds

[20a-F210-1] Wettability Improvement of Cu2Te buffer layer and preparation of CuGaTe2 Thin Films

[20a-F210-2] Phosphorus doping of ZnTe grown by MBE

[20a-F210-3] Annealing strudy of MOVPE-grown (211)CdTe/Si layers

[20a-F210-4] Gamma-ray irradiation effects of CdTe/CdS photodiode for radiation tolerant FEA image sensor

[20a-F210-5] Observation of Absorption Edge and Electronic Structure Calculation of Rocksalt-structured MgxZn1-xO

△ [20a-F210-6] Temperature and Excitation Density Dependence of Deep Ultraviolet Cathodoluminescence in Rocksalt-structured MgxZn1-xO

Authentication

[20a-F210-1] Wettability Improvement of Cu₂Te buffer layer and preparation of CuGaTe₂ Thin Films

[20a-F210-5] Observation of Absorption Edge and Electronic Structure Calculation of Rocksalt-structured Mg_xZn_1-xO

△ [20a-F210-6] Temperature and Excitation Density Dependence of Deep Ultraviolet Cathodoluminescence in Rocksalt-structured Mg_xZn_1-xO