Oral presentation

[19a-F202-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 19, 2018 9:30 AM - 12:15 PM F202 (61-202)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.)

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9:30 AM - 9:45 AM

▲ [19a-F202-1] Investigation on p-BaSi₂/n-Si heterojunction solar cells using a Si(001) substrate

〇Tianguo Deng¹, Takuma Sato¹, Zhihao Xu¹, Ryota Takabe¹, Suguru Yachi¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

9:45 AM - 10:00 AM

△ [19a-F202-2] Fabrication of BaSi₂ p-n homojunction solar cells by molecular beam epitaxy

〇Komomo Kodama¹, Toko Kaoru¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

10:00 AM - 10:15 AM

[19a-F202-3] Control of initial process in BaSi₂ thermal evaporation for p-type BaSi₂/n-type crystalline Si solar cells with high open-circuit voltage

〇(M1)Michinobu Fujiwara¹, Kazuma Takahashi¹, Yoshihiko Nakagawa¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Takashi Itoh¹, Noritaka Usami¹ (1.Nagoya Univ.)

10:15 AM - 10:30 AM

[19a-F202-4] Effect of ITO heating deposition on the performance of p-BaSi₂/n-Si hetero junction solar cells

〇(B)Ryota Sugiyama¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

10:30 AM - 10:45 AM

[19a-F202-5] Preparation of BaSi₂ thin films on micro-textured glass substrates and evaluation of optical properties

〇(DC)Yoshihiko Nakagawa¹, Robin Vismara², Thomas Loef², Yilei Tian², Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Olindo Isabella², Miro Zeman², Noritaka Usami¹ (1.Nagoya Univ., 2.TUDelft)

11:00 AM - 11:15 AM

[19a-F202-6] Characterization of Ion-Beam-Synthesized β-FeSi₂ Films Using a Slow Positron Beam

〇Atsushi YABUUCHI¹, Atsushi Kinomura¹, Masaki Maekawa², Atsuo Kawasuso² (1.Kyoto Univ., 2.QST)

11:15 AM - 11:30 AM

[19a-F202-7] Influence of post-annealing on the defect properties of BaSi₂ light absorption layers

〇Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

11:30 AM - 11:45 AM

[19a-F202-8] Thickness and Ba/Si deposition rate ratio of Raman spectra of BaSi₂ epitaxial films

〇Takuma Sato¹, Ryota Takabe¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

11:45 AM - 12:00 PM

▲ [19a-F202-9] Visible- Light Driven Photocatalytic Activity of β-In₂S₃Indium Sulfide Quantum Dots and β-In₂S₃/Ag Nanohybrid Structures

〇(D)Anitha Dharmalingam¹, Anita R Warrier¹ (1.NANOPHOTONICS RESEARCH LABORATORY, AMET UNIV. ,CHENNAI 603112)

12:00 PM - 12:15 PM

[19a-F202-10] Electronic structure of interstitial hydrogen in wide gap semiconductor IGZO and ZnO

〇Kenji Kojima¹, Masatoshi Hiraishi¹, Hirotaka Okabe¹, Akihiro Koda¹, Ryosuke Kadono¹, Andreas Suter², Thomas Prokscha², Zahar Salman², Naoki Ohashi³, Keisuke Ide⁴, Satoru Matsuishi⁴, Toshio Kamiya⁴, Hideya Kumomi⁴, Hideo Hosono⁴ (1.KEK-IMSS, 2.PSI-LMU, 3.NIMS, 4.Tokyo Inst. Tech)

Oral presentation

[19p-F202-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 19, 2018 1:45 PM - 6:15 PM F202 (61-202)

Takashi Suemasu(Univ. of Tsukuba), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

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1:45 PM - 2:00 PM

[19p-F202-1] Electronic strcture of Ba_1-xSr_xSi₂ II

〇Motoharu Imai¹, Mukesh Kumar¹, Naoto Umezawa¹ (1.NIMS)

2:00 PM - 2:15 PM

[19p-F202-2] Physical Informationization of Infra-Red Absorption Spectrum

〇Yoshihito Maeda¹, Ryota Udeda¹, Ryoga Koide¹, Kazuki Fujita¹ (1.Kyutech)

2:15 PM - 2:30 PM

[19p-F202-3] Analysis of impurity conduction in n-type GaAs based on a Hubbard-band model

〇Yasutomo Kajikawa¹ (1.Shimane Univ.)

2:30 PM - 2:45 PM

[19p-F202-4] Si-doping effect on diluted magnetic semiconductro superlattice GaGdAs/GaAs

〇Hayato Miyagawa¹, Yoshiyuki Onishi¹, Shyun Koshiba², Naoshi Takahashi², Yoshihiko Inada³ (1.Facl. Eng. Kagawa Univ., 2.Facl. Edu. Kagawa Univ., 3.Okayama Univ.)

2:45 PM - 3:00 PM

▼ [19p-F202-5] Transparent Amorphous p-type Semiconductor with High Mobility (~9 cm²/Vs), Cu-Sn-I: Utilization of I 5p orbital as Pseudo Extended s-orbital

〇(D)Taehwan Jun², Junghwan Kim¹, Hideo Hosono^1,2 (1.MCES, Tokyo Tech, 2.MSL, Tokyo Tech)

3:15 PM - 3:30 PM

[19p-F202-6] Analysis of vapor composition and film formation process in BaSi₂ evaporation

〇Kosuke Hara¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)

3:30 PM - 3:45 PM

[19p-F202-7] Effects of growth temperature on the electrical properties of SrGe₂ thin films
on a Ge(110) substrate

〇Toshifumi Imajo¹, Kaoru Toko¹, Ryota Takabe¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

3:45 PM - 4:00 PM

[19p-F202-8] Influence of growth rate on molecular beam epitaxy of BaSi₂ epitaxial films

〇Shu Sugiyama¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ.Tsukuba)

4:00 PM - 4:15 PM

[19p-F202-9] Analysis of vibrational modes in BaSi₂ epitaxial film by Raman depolarization ratio

〇Hirofumi Hoshida¹, Naoki Murakoso¹, Takashi Suemasu², Yoshikazu Terai¹ (1.Kyusyu Inst. of Tech., 2.Univ. of Tsukuba.)

4:15 PM - 4:30 PM

△ [19p-F202-10] Preparation of Sr-Si film by RF magnetron sputtering method

〇(B)Kodai Aoyama¹, Takao Shimizu¹, Hideto Kuramochi², Masami Mesuda², Ryo Akiike², Yoshisato Kimura¹, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.Tosoh)

4:30 PM - 4:45 PM

[19p-F202-11] Preparation of poly-crystalline BaSi₂ thin-films on Si substrate by helicon-wave plasma sputtering

〇Satoshi Matsuno¹, Ryota Takabe¹, Masami Mesuda², Hideto Kuramochi², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh corp.)

5:00 PM - 5:15 PM

[19p-F202-12] Ruthenium−Silicide Formation at Ru/SiO_x Interfaces by Synchrotron Radiation

〇Shuhei Ichikawa¹, Daiki Furukawa², Kazuhisa Sato^1,2, Masaki Imamura³, Kazutoshi Takahashi³, Hidehiro Yasuda^1,2 (1.Research Center for UHVEM, Osaka Univ., 2.Osaka Univ., 3.Saga Univ.)

5:15 PM - 5:30 PM

[19p-F202-13] Growth of Ru₂Si₃ thin films by solid phase epitaxy and their electrical properties

〇Kenta Setojima¹, Shuya Ikeda¹, Kazuya Ogi¹, Naohiro Oka¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

5:30 PM - 5:45 PM

[19p-F202-14] Energetic consideration of defected Rhenium disilicide, ReSi_2-x,
and the electronic structure of Re₄Si₇(ReSi_1.75), revisited.

〇Yoji Imai¹, Atsushi Yamamoto¹ (1.AIST)

5:45 PM - 6:00 PM

▲ [19p-F202-15] Growth of Type II Germanium Clathrate Na_xGe₁₃₆ Thin Films on Sapphire Substrates

〇Himanshu Shekhar Jha¹, N. Sugii¹, F. Ohashi¹, T. Kume¹, T. Mukai¹, T. Ban¹, S. Nonomura¹ (1.Gifu University)

6:00 PM - 6:15 PM

[19p-F202-16] Formation of Er silicate in Si nanowire

〇Naoya Fujiwara¹, Toshiki Wakamatsu¹, Takeshi Ishiyama¹ (1.Toyohashi Univ.)

Poster presentation

[18p-P6-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 18, 2018 1:30 PM - 3:30 PM P6 (P)

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1:30 PM - 3:30 PM

[18p-P6-1] Effect of annealing on electrical properties of Mg₂Si crystals (II)

〇(B)Takuma Ishikawa¹, Kohei Nakano¹, Yoshiaki Hara², Haruhiko Udono¹ (1.Ibaraki Univ., 2.Ibaraki College of Tech.)

1:30 PM - 3:30 PM

[18p-P6-2] Relationship between carrier density and IR absorption of annealed Mg₂Si crystals(Ⅱ)

〇(M1)Fuko Yaguchi¹, Kohei Nakano¹, Takuma Ishikawa¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

1:30 PM - 3:30 PM

[18p-P6-3] Effect of impurity on oxidation characteristics of melt grown Mg₂Si (II)

〇(B)Dai Kaneda¹, Shu Konno¹, Ryujyou Sugahara¹, Haruhiko Udono¹ (1.Ibaraki University)

1:30 PM - 3:30 PM

[18p-P6-4] Electrical characteristics of Mg₂Si mesa-PD’s fabricated under various RTD process

〇Fumiya Takahashi¹, Tatsuya Nakano¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

1:30 PM - 3:30 PM

[18p-P6-5] Low-Temperature Photoresponsivity of Mg₂Si mesa-PD's with ring electrode

〇Daisuke Niioka¹, Yuma Onizawa¹, Misa Yoshida², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

1:30 PM - 3:30 PM

[18p-P6-6] Attempts to synthesize of (OsFe)Si₂ by Czochralski method

〇Takachika Isomae¹, Tetsu Sugaya¹, Shouta Okazaki¹, Keisuke Sato¹, Hirohumi Kawanaka², Yoshiaki Hara¹ (1.NIT, Ibaraki College, 2.AIST)

1:30 PM - 3:30 PM

[18p-P6-7] Optimization of donor activation conditions in Sb-doped β-FeSi₂ epitaxial films

〇Hajime Eguchi¹, Motoki Iinuma¹, Hirofumi Hoshida¹, Naoki Murakoso¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

1:30 PM - 3:30 PM

[18p-P6-8] Dependence of 1.5 μm PL on Si substrate orientation in Si/β-FeSi₂/Si stacked structures

〇Shuya Ikeda¹, Naohiro Oka¹, Kazuya Ogi¹, Kenta Setojima¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

1:30 PM - 3:30 PM

[18p-P6-9] Growth of CaSi₂ Layer on Si(111) Substrate by MBE

〇Kenji Ito¹, Tetsu Ohsuna¹, Hideyuki Nakano¹, Takashi Suemasu² (1.TOYOTA CRDL, INC., 2.Univ. Tsukuba)

1:30 PM - 3:30 PM

▲ [18p-P6-10] Surface passivation effect of RF-plasma processed a-Si:H layers
on the optical properties of BaSi₂ epitaxial films

〇(M2)Zhihao Xu¹, Kazuhiro Gotoh², Tianguo Deng¹, Kaoru Toko¹, Noritaka Usami², Takashi Suemasu¹ (1.Univ Tsukuba, 2.Nagoya Univ)

1:30 PM - 3:30 PM

[18p-P6-11] Modification of Si-based Nanosheets by Metal Chloride Treatment

Kazuma Konishi¹, Yuya Kujime¹, Tsubasa Kato¹, Yuki Kumazawa², Naohisa Takahashi³, Naoki Nanba³, 〇Hirokazu Tatsuoka² (1.Fac. Eng., Shizuoka Univ., 2.Grad. Sch. Integr. Sci. & Technol., Dept. Eng., Shizuoka Univ., 3.Yamaha Central Research Lab.)

1:30 PM - 3:30 PM

[18p-P6-12] Synthesis of Nanostructures from Oxide Powders in Acid Solution

Shinya Kusasaki¹, Naohisa Takahashi², Naoki Nanba², 〇Hirokazu Tatsuoka¹ (1.Grad. Sch. Integr. Sci. & Technol., Dept. Eng., Shizuoka Univ., 2.Yamaha Central Research Lab.)

1:30 PM - 3:30 PM

[18p-P6-13] Measurement of time resolution photothermal divergences signal on Nitrogen-dopede SiC

〇Shinya Takeichi¹, Shintaro Harada¹, Shun Kamada², Weiwei Xu¹, Takanori Kozai¹, Takeshi Fujihara¹, Tao Zheng¹, Nobutomo Uehara³, Tomoya Konishi¹, Masaru Kamano¹ (1.NIT Anan College, 2.Tokushima Univ., 3.NIT)

1:30 PM - 3:30 PM

[18p-P6-14] Evaluation of valence band offset of atomically-thin CaF₂/Si heterointerface

〇Satoshi Fukuyama¹, Masahiro Watanabe¹ (1.Tokyo Tech.)

1:30 PM - 3:30 PM

[18p-P6-15] Evaluation of lattice displacement and residual hydrogen in GaN by rutherford backscattering and elastic recoil detection analysis

〇Kazuki Sato¹, Kazumasa Kushida², Tomoaki Nishimura¹, Kazuo Kuriyama¹, Toru Nakamura¹ (1.Hosei Univ., 2.Osakakyoiku Univ.)

1:30 PM - 3:30 PM

[18p-P6-16] Evaluation of lattice displacement of Zn-ion implanted GaN single crystal by Rutherford backscattering

〇Kyouhei Kubota¹, Nishimura Tomoaki¹, Kuriyama Kazuo¹, Nakamura Tohru¹ (1.Hosei Univ.)

1:30 PM - 3:30 PM

[18p-P6-17] Simulation of TOF transient currents by the CIP method

〇Yoshitaka Mishima¹, Takahiro Masuda¹, Kazuhiko Suzuki¹, Satoru Seto² (1.HUS, 2.NIT, Ishikawa Coll.)

1:30 PM - 3:30 PM

[18p-P6-18] Estimating material properties in machine learning and first principles

〇Kazuki Mori¹, Masahito Segawa¹ (1.ITOCHU Techno-Solutions Corp.)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19a-F202-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [19a-F202-1] Investigation on p-BaSi2/n-Si heterojunction solar cells using a Si(001) substrate

△ [19a-F202-2] Fabrication of BaSi2 p-n homojunction solar cells by molecular beam epitaxy

▲ [19a-F202-9] Visible- Light Driven Photocatalytic Activity of β-In2S3 Indium Sulfide Quantum Dots and β-In2S3 /Ag Nanohybrid Structures

[19p-F202-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

▼ [19p-F202-5] Transparent Amorphous p-type Semiconductor with High Mobility (~9 cm2/Vs), Cu-Sn-I: Utilization of I 5p orbital as Pseudo Extended s-orbital

△ [19p-F202-10] Preparation of Sr-Si film by RF magnetron sputtering method

▲ [19p-F202-15] Growth of Type II Germanium Clathrate NaxGe136 Thin Films on Sapphire Substrates

[18p-P6-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [18p-P6-10] Surface passivation effect of RF-plasma processed a-Si:H layerson the optical properties of BaSi2 epitaxial films

Authentication

▲ [19a-F202-1] Investigation on p-BaSi₂/n-Si heterojunction solar cells using a Si(001) substrate

△ [19a-F202-2] Fabrication of BaSi₂ p-n homojunction solar cells by molecular beam epitaxy

▲ [19a-F202-9] Visible- Light Driven Photocatalytic Activity of β-In₂S₃Indium Sulfide Quantum Dots and β-In₂S₃/Ag Nanohybrid Structures

▼ [19p-F202-5] Transparent Amorphous p-type Semiconductor with High Mobility (~9 cm²/Vs), Cu-Sn-I: Utilization of I 5p orbital as Pseudo Extended s-orbital

▲ [19p-F202-15] Growth of Type II Germanium Clathrate Na_xGe₁₃₆ Thin Films on Sapphire Substrates

▲ [18p-P6-10] Surface passivation effect of RF-plasma processed a-Si:H layers
on the optical properties of BaSi₂ epitaxial films