[17a-B203-1~10] 3.13 Semiconductor optical devices

▲ [17a-B203-3] A simulation analysis of electrical characteristics of type-II InAs/GaSb superlattice mid-infrared p-i-n photodetector

〇(D)Yen Thi Le¹, Yoshinari Kamakura¹, Takeharu Goji Etoh², Nobuya Mori¹ (1.Osaka Univ., 2.Ritsumeikan Univ.)

Keywords:infrared photodetector, superlattice, device simulation

In this work, the electrical performance of InAs/GaSb type-II superlattice (T2SL) infrared detectors has been analyzed theoretically using a two dimensional device simulator based on the drift-diusion model. We especially focus on the dark current characteristics. In some previous works, the material parameters of T2SL used in the device simulation were set by calculating the average of InAs and GaSb bulk values. In our model, intrinsic physical parameters such as the effective density of states and effective mass were extracted from the k.p band calculation. Only carrier lifetime parameter is considered as a fitting parameter because it strongly depends on the defects of material and is an unknown factor in our model. The simulation results show that not only the longer carrier lifetime, but also the smaller intrinsic carrier density would be important contribution.