[17a-C101-1~11] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

[17a-C101-8] Effect of Overlapped Scan on CLC (100) Crystal Growth

Sasaki Nobuo^1,2、〇(M2)razali arif muhammad²、Uraoka Yukiharu² (1.Sasaki Consulting、2.NAIST)

キーワード：CLC, Laser Crystallization, Poly-Si, TFT

In the CLC crystallization having the (100) textures, the effect of cross scan was investigated. Grain boundary generation at the cross point was observed.