[17a-E202-1~10] 15.4 III-V-group nitride crystals

[17a-E202-6] Suppression effect of hydrogen-assisted thermal decomposition of GaN by ultrathin SiO₂

〇(B)Yuuki Ooe¹, Shun Ishijima¹, Kohei Ogawa¹, Yusuke Namae¹, Akihiro Matsuoka¹, Yusei Kawasaki¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

Keywords:nanostructures, GaN, Thermal decomposition

We are studying hydrogen anisotropic thermal etching (HEATE) method which is expected to be microfabrication with low processing damage, focusing on thermal decomposition reaction of GaN in a low pressure hydrogen atmosphere. We have reported the etching characteristics of the HEATE method and fabrication of InGaN / GaN nanostructured LEDs etc. Thermal decomposition of GaN is suppressed by forming SiO₂ film mask. In this presentation, we investigate the ability to suppress decomposition of SiO₂ and report possibility of highly precise microfabrication by ultrathin SiO2 film mask.