[17a-F202-1~11] 7.4 Buried interface sciences with quantum beam

[17a-F202-6] Photoinduced valence change of EuNi₂(Si_0.21Ge_0.79)₂ observed by time-resolved XAS

Yuichi Yokoyama^1,2, Koki Kawakami³, Yasuyuki Hirata^1,2, Kohei Yamamoto^1,2, Kou Takubo¹, Koudai Abe³, Akihiro Mitsuda⁴, Hirofumi Wada⁴, Takayuki Uozumi³, Kojiro Mimura³, 〇Hiroki Wadati^1,2 (1.ISSP, Univ. of Tokyo, 2.Dept. of Phys, Univ. of Tokyo, 3.Osaka Pref. Univ., 4.Kyushu Univ.)

Keywords:time-resolved, x-ray absorption spectroscopy, 4f electrons

4f electron systems have characteristic valence fluctuations in time and space, and valence transitions occur due to external stimuli such as temperature, pressure, and magnetic fields. We used a time-resolved x-ray absorption spectroscopy instrument in BL07LSU, SPring-8, and observed photoinduced electronic structure changes of EuNi₂(Si_0.21Ge_0.79)₂ by time-resolved measurements. By performing pump-probe techniques using Ti:sapphire laser (800 nm) as a pump light and synchrotron x-rays as a probe light, we observed photoinduced valence changes.