The 65h JSAP Spring Meeting, 2018

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[17a-F206-1~13] 13.3 Insulator technology

Sat. Mar 17, 2018 9:00 AM - 12:30 PM F206 (61-206)

Masao Inoue(Renesas), Takanobu Watanabe(Waseda Univ.)

10:30 AM - 10:45 AM

[17a-F206-7] Decrease in Interface State Density of Thermal-SiO2/Si(100)
by The Nitric Acid Oxidation of Si (NAOS) Method

〇(M2)Tatsuya Ichikawa1, Taketoshi Matsumoto1, Hikaru Kobayashi1 (1.ISIR,Osaka Univ.)

Keywords:silicon dioxide