Tatsuya Ichikawa

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Speaker, Author, Co-Author

Sat. Mar 17, 2018 9:00 AM - 12:30 PM F206 (61-206)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[17a-F206-1~13] 13.3 Insulator technology

10:30 AM - 10:45 AM

[17a-F206-7] Decrease in Interface State Density of Thermal-SiO₂/Si(100)
by The Nitric Acid Oxidation of Si (NAOS) Method

〇(M2)Tatsuya Ichikawa¹, Taketoshi Matsumoto¹, Hikaru Kobayashi¹ (1.ISIR,Osaka Univ.)