2018年第65回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

3 光・フォトニクス » 3.5 レーザー装置・材料

[17p-B403-1~17] 3.5 レーザー装置・材料

2018年3月17日(土) 13:15 〜 18:00 B403 (53-403)

鈴木 将之(愛知医大)、佐藤 庸一(分子研)、宇野 和行(山梨大)

16:45 〜 17:00

[17p-B403-13] Gain Aperture Concept for the Development of High Brigthness micro-MOPA

Vincent Yahia1、〇Takunori Taira1 (1.Institute for Molecular Science)

キーワード:solid state laser, microchip laser, high brigthness

Development of micro-MOPA system requires a high-gain compact amplifying medium and low-footprint beam cleaning elements ensuring a high quality seeder beam. An end-pumped microchip amplifier was used as a compact beam cleaning element inducing reduction of M2 from 3 to 1.3 through the process of gain aperture. This element was introduced into classic MOPA system leading to an increase by a factor of 100 of the maximum achievable brightness. Beam degradation due to amplifier internal processes (thermal and nonlinear) are expected to be solved by our recently developped Distributed Face Cooling gain medium which is also introduced.