[17p-C101-1~6] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

△ [17p-C101-1] Effect of SiO_x capping film on crystallization of Ge film by flash lamp annealing

〇(B)Yoshiki Akita¹, Akira Heya¹, Naoto Matsuo¹, Kazuyuki Kohama², Kazuhiro Ito² (1.univ.of Hyogo, 2.univ. of Osaka)

Keywords:semiconductor, crystallization, germanium