[17p-C201-1~19] 8.5 Plasma phenomena, emerging area of plasmas and their new applications

[17p-C201-2] Low-Energy Silicon Molecular Ion Beam Production for SiO Film Formation

〇Satoru Yoshimura¹, Satoshi Sugimoto¹, Takae Takeuchi², Kensuke Murai³, Masato Kiuchi^1,3 (1.Osaka Univ., 2.Nara Women's Univ., 3.AIST)

Keywords:silicon oxide, hexamethyldisiloxane, TEOS

Fragment ions produced from hexamethyldisiloxane (HMDSO) and tetraethylorthosilicate (TEOS) in a Freeman-type ion source were studied using a low-energy mass-selected ion beam system. The mass numbers of the fragment ions were identified. Among those fragment ions, SiO⁺ ions from HMDSO and SiO₃H₃⁺ ions from TEOS were mass-selected. The ion energy was approximately 50 eV. Then, the ions were irradiated to substrates and resulting deposited films were analyzed. Following the completion of the ion irradiation experiment, X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy measurements of the films demonstrated the occurrence of silicon oxide deposition.