[17p-D104-1~10] 10.2 スピン基盤技術・萌芽的デバイス技術

▼ [17p-D104-2] Evaluation of temperature-dependent spin Hall angle in CoFeB/MgO/Pt tunneling junctions by using Spin Hall effect tunneling spectroscopy

〇Keita Nakagawara¹、Shinya Kasai²、Seiji Mitani²、Shutaro Karube¹、Makoto Kohda^1,3、Junsaku Nitta^1,3 (1.Tohoku Univ、2.Nat. Inst. for Mater Sci、3.CSRN, Tohoku Univ.)

キーワード：Spin Hall effect tunneling spectroscopy

Spin Hall effect (SHE) and its inverse effect (i-SHE) are promising ways to generate and to detect spin currents, respectively. The spin Hall angle θ_SH is a measure of the conversion efficiency between charge current and spin current. Various methods to evaluate θ_SH have been demonstrated, such as spin pumping, harmonic measurement and lateral spin valve. Recently, SHE tunneling spectroscopy (SHT) has been proposed as an alternative way to evaluate θ_SH. In this method, i-SHE signal is obtained via tunneling spin polarized currents, which is applicable for not only metals but also topological insulators. In this study, we demonstrate the detailed spin dependent transport mechanism in spin Hall effect tunneling devices.