3:20 PM - 3:50 PM
[17p-E201-6] Development of GaN MOCVD Epitaxial Wafers for RF Applications
Keywords:GaN, HEMT, MOCVD
Presentation information
Symposium (Oral)
Symposium » Progress of compound semiconductor device technologies: what can learn from history of GaAs device development
[17p-E201-1~7] Progress of compound semiconductor device technologies: what can learn from history of GaAs device development
Sat. Mar 17, 2018 1:15 PM - 4:20 PM E201 (57-201)
Masashi Kato(NITech), Taketomo Sato(Hokkaido Univ.)