The 65h JSAP Spring Meeting, 2018

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-E202-1~19] 15.4 III-V-group nitride crystals

Sat. Mar 17, 2018 1:15 PM - 6:30 PM E202 (57-202)

Motoaki Iwaya(Meijo Univ.), Yoshio Honda(Nagoya Univ.), Yoshiki Saito(TS Opto)

5:00 PM - 5:15 PM

△ [17p-E202-14] Reuse of ScAlMgO4 Substrates Utilized for GaN Growth

〇(M1)Kazuki Ohnishi1, Shigeyuki Kuboya1, Tomoyuki Tanikawa1, Tsuguo Fukuda2, Takashi Matsuoka1 (1.IMR, Tohoku Univ., 2.Fukuda Crystal Lab.)

Keywords:Nitride Semiconductor, GaN, ScAlMgO4