The 65h JSAP Spring Meeting, 2018

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9 Applied Materials Science » 9.5 New functional materials and new phenomena

[17p-F202-1~12] 9.5 New functional materials and new phenomena

Sat. Mar 17, 2018 1:45 PM - 5:15 PM F202 (61-202)

Kouichi Takase(Nihon Univ.), Satoshi Matsuishi(Tokyo Institute of Technology), Takayuki Nakane(NIMS)

2:30 PM - 2:45 PM

△ [17p-F202-4] Growth and Properties of Cu3MN(M=Zn,Pd) thin films by sputtering

〇(B)Hirobumi Kyo1, Hidefumi Asano1 (1.Nagoya Univ.)

Keywords:Topological semimatel, Crystal growth, Sputtering

The nitride semiconductor Cu3N doped with metal element M shows metallic conductivity. Cu3MN which M= Zn,Pd can be a topological semimetal, it have been predited in recent years. Even bulk and thin film samples of those materials have been built so many, but there is a few result about their electromagnetical properties. Therefore, in this research, we used sputtering tech, controlling the type and content of M, to make the thin films and to measure their structural and electromagnetical properties.