[17p-F206-1~17] 13.3 絶縁膜技術

▲ [17p-F206-1] [Young Scientist Presentation Award Speech] Physical origins of slow traps for ALD high-k dielectrics on GeO_x/Ge interfaces

〇Mengnan Ke¹、Kimihiko Kato¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Tokyo Univ.)

キーワード：Ge, slow trap density, semiconductor