[17p-F206-1~17] 13.3 Insulator technology

[17p-F206-12] Formation of Si-doped HfO₂ Ferroelectric Thin Films using Ion Implantation

〇Shinji Migita¹, Hiroyuki Ota¹, Hiroyuki Yamada¹, Keisuke Shibuya¹, Akihito Sawa¹, Takashi Matsukawa¹, Akira Toriumi² (1.AIST, 2.Univ. of Tokyo)

Keywords:ferroelectric, HfO2, Ion implantation

Metal dopants such as Si, Al, and rare earth elements are indispensable for the emergence of ferroelectric property in HfO₂ films. The Si-doped HfO₂ films are usually prepared by co-deposition or alternating deposition techniques. In this work, we demonstrate ion implantation technique of Si atoms into HfO₂ films as another route for the formation of ferroelectric HfO₂ films.