Oral presentation

[17a-F206-1~13] 13.3 Insulator technology

Sat. Mar 17, 2018 9:00 AM - 12:30 PM F206 (61-206)

Masao Inoue(Renesas), Takanobu Watanabe(Waseda Univ.)

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9:00 AM - 9:15 AM

△ [17a-F206-1] Evaluation of trapped charges during high-field stress application to SiO₂

〇(M1)Takeshi Nanke¹, Ryu Hasunuma¹ (1.Univ. of Tsukuba)

9:15 AM - 9:30 AM

[17a-F206-2] Evaluation of the depth profile of charge density in SiO₂ film by C-V measurement in HF solution

〇Yuto Nakazawa¹, Ryu Hasunuma¹ (1.Tsukuba Univ.)

9:30 AM - 9:45 AM

[17a-F206-3] The Variation of Charge Redistribution Owing to Deterioration of Si₃N₄ Evaluated by KFM

〇Koudai Ozawa¹, Ryu Hasunuma¹ (1.Univ. of Tsukuba)

9:45 AM - 10:00 AM

[17a-F206-4] Electronic States of Thermally-grown SiO₂/Si Structure Measured by Total Photoelectron Yield Spectroscopy

〇Akio Ohta¹, Takuya Imagawa¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

10:00 AM - 10:15 AM

△ [17a-F206-5] Oxygen density dependence of dynamical characteristics on high-temperature SiO₂

〇Yuji Yajima¹, Kenji Shiraishi^2,4, Tetsuo Endoh^3,4, Hiroyuki Kageshima^1,4 (1.Shimane Univ., 2.Nagoya Univ., 3.Tohoku Univ., 4.JST-ACCEL)

10:15 AM - 10:30 AM

[17a-F206-6] Re-consideration for phonon transition rate assumed in formula of Mott variable-range hopping

〇Michiru Hogyoku¹, Takashi Izumida¹, Hiroyoshi Tanimoto¹, Nobutoshi Aoki¹, Seiji Onoue¹ (1.Toshiba Memory Corp.)

10:30 AM - 10:45 AM

[17a-F206-7] Decrease in Interface State Density of Thermal-SiO₂/Si(100)
by The Nitric Acid Oxidation of Si (NAOS) Method

〇(M2)Tatsuya Ichikawa¹, Taketoshi Matsumoto¹, Hikaru Kobayashi¹ (1.ISIR,Osaka Univ.)

10:45 AM - 11:00 AM

▲ [17a-F206-8] Heat treatment in liquid water at 80^oC used to improve the interface characteristic of metal-oxide-semiconductor capacitor

〇Yoshito Hirokawa¹, Masahiko Hasumi¹, Toshiyuki Samesima¹, Tomohisa Mizuno² (1.TUAT, 2.Kanagawa Univ.)

11:15 AM - 11:30 AM

△ [17a-F206-9] Difference of temperature dependent V_FB shift caused by interface dipole at Al₂O₃/SiO₂, MgO/SiO₂ and MgO/Al₂O₃

〇Takashi Hamaguchi¹, Koji Kita¹ (1.The Univ. of Tokyo)

11:30 AM - 11:45 AM

▲ [17a-F206-10] Valency of cation rather than Oxygen Density may govern the Dipole Moment at high-k/SiO₂ interfaces

〇(M1)Marc Perea¹, Okuto Takahashi¹, Koki Nakane¹, Nobuhiro Nagasawa¹, Takanobu Watanabe¹ (1.Waseda University)

11:45 AM - 12:00 PM

△ [17a-F206-11] Optimized post-deposition annealing for improved bias stability of atomic-layer-deposited Al2O3 films

〇Kiyotaka Horikawa¹, Atsushi Hiraiwa^2,4, Satoshi Okubo¹, Taisuke Kageura¹, Hiroshi Kawarada^1,2,3 (1.Waseda Univ., 2.RONLI, Waseda Univ., 3.KMLMST, Waseda Univ., 4.Nagoya Univ.)

12:00 PM - 12:15 PM

[17a-F206-12] Pre-cleaning Effects for Al₂O₃/p-In_xGa_1-xAs MOS Interfaces

〇(M1)Chiaki Yokoyama¹, Chi-Yu Chang¹, Kimihiko Kato¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Tokyo Univ.)

12:15 PM - 12:30 PM

[17a-F206-13] Evaluation of Si Nanowire MOS Capacitor Using High-k Materials

〇Ryota Nezasa¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ.)

Oral presentation

[17p-F206-1~17] 13.3 Insulator technology

Sat. Mar 17, 2018 1:45 PM - 6:15 PM F206 (61-206)

Tomo Ueno(TUAT), Akio Ohta(Nagoya Univ.)

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1:45 PM - 2:00 PM

▲ [17p-F206-1] [Young Scientist Presentation Award Speech] Physical origins of slow traps for ALD high-k dielectrics on GeO_x/Ge interfaces

〇Mengnan Ke¹, Kimihiko Kato¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Tokyo Univ.)

2:00 PM - 2:15 PM

▼ [17p-F206-2] Kinetic Model for Thermal Oxidation of Germanium

〇Wang Xu¹, Tomonori Nishimura¹, Takeaki Yajima¹, Akira Toriumi¹ (1.Tokyo Univ.)

2:15 PM - 2:30 PM

[17p-F206-3] Degradation of surface flatness and change of oxidation mechanism during Ge oxidation

〇Senri Takemura¹, Shigehisa Shibayama¹, Tomonori Nishimura¹, Takeaki Yajima¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

2:30 PM - 2:45 PM

▲ [17p-F206-4] Evaluation of border-traps in GeO₂/Ge gate stacks grown by thermal oxidation and plasma oxidation

〇(D)Weichen Wen¹, Taisei Sakaguchi¹, keisuke Yamamoto¹, Dong Wang¹, Hiroshi Nakashima² (1.IGSES, Kyushu Univ., 2.GIC, Kyushu Univ.)

2:45 PM - 3:00 PM

[17p-F206-5] Mechanism of Ge precipitation at oxide/SiGe interface after thermal oxidation

〇Yusuke Noma¹, Woojin Song¹, Tomonori Nishimura¹, Takeaki Yajima¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

3:00 PM - 3:15 PM

[17p-F206-6] Infulence by the High-k layer to give GeO₂/Ge interface characteristics

〇Shotaro Wachi¹, Yoshitaka Iwasaki¹, Tomo Ueno¹, Yoshinori Kitahara¹, Koji Yamada¹, Mitaro Namiki¹ (1.Tokyo Univ. of Agri.&Tech)

3:15 PM - 3:30 PM

[17p-F206-7] Characteristic change of GeO ₂ / Ge interface by Hf-Post Metallization Annealing

〇Haruka Fujiwara¹, Yoshitaka Iwazaki¹, Tomo Ueno¹, Hiroshi Yamada¹, Mitaro Namiki¹ (1.Tokyo Univ. of Agri. & Tech)

3:30 PM - 3:45 PM

[17p-F206-8] Improvement of interface properties of crystalline Lu-doped La₂O₃/La₂O₃/Ge(111) MIS structures by wet treatments

〇Hitohisa Furusho¹, Kyoichi Takayama¹, Keisuke Yamamoto², Hiroshi Nakashima³, Hiroshi Nohira⁴, Takeshi Kanashima¹ (1.Osaka Univ., 2.IGSES, Kyushu Univ., 3.GIC, Kyushu Univ., 4.Tokyo City Univ.)

4:00 PM - 4:15 PM

△ [17p-F206-9] Interface trap density of high-k gate stack using Flash Lamp Annealing (FLA) under NH₃ ambient

〇Kodai Shuto¹, Taiho Yoshinaka¹, Ryo Suemasa¹, Hikaru Kawarazaki², Takayuki Aoyama², Shinichi Kato², Yasuo Nara¹ (1.Univ. of Hyogo, 2.SCREEN Semiconductor Solutions Co.)

4:15 PM - 4:30 PM

[17p-F206-10] Fabrication and Evaluation of HfO₂/Si Structure by Chemical Oxidation Method on Metal Hf/Si Structure

〇Hiroki Oba¹, Riho Nonaka¹, Yoshitaka Iwasaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri. & Tech.)

4:30 PM - 4:45 PM

[17p-F206-11] Crystallization of HfO₂ with pulsed laser annealing

〇(M1)Yuki Mori¹, Shigehisa Shibayama¹, Takeaki Yajima¹, Tomonori Nishimura¹, Shinji Migita², Akira Toriumi¹ (1.Univ. of Tokyo, 2.AIST)

4:45 PM - 5:00 PM

[17p-F206-12] Formation of Si-doped HfO₂ Ferroelectric Thin Films using Ion Implantation

〇Shinji Migita¹, Hiroyuki Ota¹, Hiroyuki Yamada¹, Keisuke Shibuya¹, Akihito Sawa¹, Takashi Matsukawa¹, Akira Toriumi² (1.AIST, 2.Univ. of Tokyo)

5:00 PM - 5:15 PM

△ [17p-F206-13] Demonstration of Ferroelectric un-doped ZrO₂

〇Shigehisa Shibayama¹, Tomonori Nishimura¹, Shinji Migita², Akira Toriumi¹ (1.Univ. of Tokyo, 2.AIST)

5:15 PM - 5:30 PM

[17p-F206-14] On physical origin of ferroelectricity in wide concentration range of Hf_xZr_1-xO₂

〇Shigehisa Shibayama¹, Tomonori Nishimura¹, Shinji Migita², Akira Toriumi¹ (1.Univ. of Tokyo, 2.AIST)

5:30 PM - 5:45 PM

△ [17p-F206-15] Improvement in ferroelectricity of Hf_xZr₁_−xO₂ thin films using top- and bottom-ZrO₂ nucleation layers

〇(M2)Takashi Onaya^1,2, Toshihide Nabatame^2,3, Naomi Sawamoto¹, Akihiko Ohi², Naoki Ikeda², Toyohiro Chikyow², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS, 3.CREST, JST)

5:45 PM - 6:00 PM

▼ [17p-F206-16] Improvements of Remanent Polarization and Endurance Characteristics in Thin Ferroelectric Y-doped HfO₂

〇(DC)Xuan Tian¹, Shigehisa Shibayama¹, Tomonori Nishimura¹, Takeaki Yajima¹, Shinji Migita², Akira Toriumi¹ (1.Univ. of Tokyo, 2.AIST)

6:00 PM - 6:15 PM

[17p-F206-17] XPS Study of Chemical Bonding Features and Inner Potential at Y₂O₃/SiO₂ Interfaces

〇Nobuyuki Fujimura¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

Poster presentation

[18p-P7-1~7] 13.3 Insulator technology

Sun. Mar 18, 2018 1:30 PM - 3:30 PM P7 (P)

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1:30 PM - 3:30 PM

△ [18p-P7-1] Effect of Atomic Hydrogen Annealing on AlO_x/GeO_x/a-Ge Gate Stack

〇(B)Tomofumi Onuki¹, Akira Heya¹, Naoto Matsuo¹ (1.Univ. of Hyogo)

1:30 PM - 3:30 PM

[18p-P7-2] Characterization of Electrical Properties of High-k/MoS₂ Fabricating Through ALD

〇WENHSIN CHANG¹, Naoya Okada¹, Hidehiro Asai¹, Koichi Fukuda¹, Toshifumi Irisawa¹ (1.AIST)

1:30 PM - 3:30 PM

[18p-P7-3] Proposal of new memory device based on oxide interface dipole

〇Noriyuki Miyata¹ (1.AIST)

1:30 PM - 3:30 PM

[18p-P7-4] Stabilization of amorphous GeO₂ network by Y doping

〇Tomonori Nishimura¹, Xiaoyu Tang¹, Cimang Lu¹, Takeaki Yajima¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

1:30 PM - 3:30 PM

[18p-P7-5] Penetration of water molecule into surface-oxidized layer of SiN_x films

〇Tomoki Oku¹, Masahiro Totuska¹, Shinichi Takagi¹ (1.Mitsubishi Electric)

1:30 PM - 3:30 PM

[18p-P7-6] Influence of film composition on conduction current in silicon nitride films after exposure to ultraviolet illumination

〇(M1)Hiroyasu Kobayashi¹, Shinji Yamaguchi¹, Kiyoteru Kobayashi¹ (1.Toukai Univ.)

1:30 PM - 3:30 PM

[18p-P7-7] Paramagnetic point defects in silicon nitride films annealed at 1050℃

〇(M1)Shinji Yamaguchi¹, Osamu Kazumi¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

Sessions

13 Semiconductors » 13.3 Insulator technology

[17a-F206-1~13] 13.3 Insulator technology

△ [17a-F206-1] Evaluation of trapped charges during high-field stress application to SiO2

△ [17a-F206-5] Oxygen density dependence of dynamical characteristics on high-temperature SiO2

▲ [17a-F206-8] Heat treatment in liquid water at 80oC used to improve the interface characteristic of metal-oxide-semiconductor capacitor

△ [17a-F206-9] Difference of temperature dependent VFB shift caused by interface dipole at Al2O3/SiO2, MgO/SiO2 and MgO/Al2O3

▲ [17a-F206-10] Valency of cation rather than Oxygen Density may govern the Dipole Moment at high-k/SiO2 interfaces

△ [17a-F206-11] Optimized post-deposition annealing for improved bias stability of atomic-layer-deposited Al2O3 films

[17p-F206-1~17] 13.3 Insulator technology

▲ [17p-F206-1] [Young Scientist Presentation Award Speech] Physical origins of slow traps for ALD high-k dielectrics on GeOx/Ge interfaces

▼ [17p-F206-2] Kinetic Model for Thermal Oxidation of Germanium

▲ [17p-F206-4] Evaluation of border-traps in GeO2/Ge gate stacks grown by thermal oxidation and plasma oxidation

△ [17p-F206-9] Interface trap density of high-k gate stack using Flash Lamp Annealing (FLA) under NH3 ambient

△ [17p-F206-13] Demonstration of Ferroelectric un-doped ZrO2

△ [17p-F206-15] Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers

▼ [17p-F206-16] Improvements of Remanent Polarization and Endurance Characteristics in Thin Ferroelectric Y-doped HfO2

[18p-P7-1~7] 13.3 Insulator technology

△ [18p-P7-1] Effect of Atomic Hydrogen Annealing on AlOx/GeOx/a-Ge Gate Stack

Authentication

△ [17a-F206-1] Evaluation of trapped charges during high-field stress application to SiO₂

△ [17a-F206-5] Oxygen density dependence of dynamical characteristics on high-temperature SiO₂

▲ [17a-F206-8] Heat treatment in liquid water at 80^oC used to improve the interface characteristic of metal-oxide-semiconductor capacitor

△ [17a-F206-9] Difference of temperature dependent V_FB shift caused by interface dipole at Al₂O₃/SiO₂, MgO/SiO₂ and MgO/Al₂O₃

▲ [17a-F206-10] Valency of cation rather than Oxygen Density may govern the Dipole Moment at high-k/SiO₂ interfaces

▲ [17p-F206-1] [Young Scientist Presentation Award Speech] Physical origins of slow traps for ALD high-k dielectrics on GeO_x/Ge interfaces

▲ [17p-F206-4] Evaluation of border-traps in GeO₂/Ge gate stacks grown by thermal oxidation and plasma oxidation

△ [17p-F206-9] Interface trap density of high-k gate stack using Flash Lamp Annealing (FLA) under NH₃ ambient

△ [17p-F206-13] Demonstration of Ferroelectric un-doped ZrO₂

△ [17p-F206-15] Improvement in ferroelectricity of Hf_xZr₁_−xO₂ thin films using top- and bottom-ZrO₂ nucleation layers

▼ [17p-F206-16] Improvements of Remanent Polarization and Endurance Characteristics in Thin Ferroelectric Y-doped HfO₂

△ [18p-P7-1] Effect of Atomic Hydrogen Annealing on AlO_x/GeO_x/a-Ge Gate Stack