The 65h JSAP Spring Meeting, 2018

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[17p-F206-1~17] 13.3 Insulator technology

Sat. Mar 17, 2018 1:45 PM - 6:15 PM F206 (61-206)

Tomo Ueno(TUAT), Akio Ohta(Nagoya Univ.)

2:45 PM - 3:00 PM

[17p-F206-5] Mechanism of Ge precipitation at oxide/SiGe interface after thermal oxidation

〇Yusuke Noma1, Woojin Song1, Tomonori Nishimura1, Takeaki Yajima1, Akira Toriumi1 (1.The Univ. of Tokyo)

Keywords:Silicon-Germanium, Oxidation