[18p-P7-1~7] 13.3 Insulator technology

[18p-P7-3] Proposal of new memory device based on oxide interface dipole

〇Noriyuki Miyata¹ (1.AIST)

Keywords:interface dipole, nonvolatile memory, MOS

We propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory which can be integrated as a Si MOS device. The first demonstration has achieved in a HfO₂/Si MOS capacitor including a monolayer-thick dipole modulator. However, this device structure is unsuitable for Si-FET-based devices due to its large interface state density (D_it). Consequently, we propose, a multi-stacked amorphous HfO₂/SiO₂ IDM structure to realize a low D_it and a wide memory window.