[17a-F206-1~13] 13.3 Insulator technology

[17a-F206-12] Pre-cleaning Effects for Al₂O₃/p-In_xGa_1-xAs MOS Interfaces

〇(M1)Chiaki Yokoyama¹, Chi-Yu Chang¹, Kimihiko Kato¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Tokyo Univ.)

Keywords:Dit, p-InGaAs, pre-cleaning

Previously, it has been revealed that in higher In content, BHF cleaning is more effective than (NH₄)S_x cleaning in lowering D_it from the midgap to the valence band edge for Al₂O₃/n-In_xGa_1-xAs MOS interfaces. In this study, in order to examine this observation more firmly, the pre-treatment effects on Al₂O₃/p-In_xGa_1-xAs MOS Interfaces have been systematically evaluated, which is quite informative to comprehensively understand the properties of In_xGa_1-xAs. The improvement of the In_xGa_1-xAs MOS interfaces in the valence band side is important for realizing compressively-strained p-MOSFETs and T-FETs.