[18p-P7-1~7] 13.3 Insulator technology

[18p-P7-5] Penetration of water molecule into surface-oxidized layer of SiN_x films

〇Tomoki Oku¹, Masahiro Totuska¹, Shinichi Takagi¹ (1.Mitsubishi Electric)

Keywords:molecular orbital calculation, humidity resistance, surface-oxidized layer

We calculated the penetration of H₂O molecules into the surface-oxidized layer formed by the substitution of oxygen atoms for nitrogen atoms in the SiN_x films and desorption of silicon atoms by the molecular orbital method. The results show that the oxidized layer formed by desorption of silicon atoms has higher permeability of H₂O molecules. We consider that desorption of silicon atoms is necessary to explain the oxidation and humidity resistance deterioration of the SiN_x film in humid environment.