The 65h JSAP Spring Meeting, 2018

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[17p-F206-1~17] 13.3 Insulator technology

Sat. Mar 17, 2018 1:45 PM - 6:15 PM F206 (61-206)

Tomo Ueno(TUAT), Akio Ohta(Nagoya Univ.)

3:30 PM - 3:45 PM

[17p-F206-8] Improvement of interface properties of crystalline Lu-doped La2O3/La2O3/Ge(111) MIS structures by wet treatments

〇Hitohisa Furusho1, Kyoichi Takayama1, Keisuke Yamamoto2, Hiroshi Nakashima3, Hiroshi Nohira4, Takeshi Kanashima1 (1.Osaka Univ., 2.IGSES, Kyushu Univ., 3.GIC, Kyushu Univ., 4.Tokyo City Univ.)

Keywords:high-k, Epitaxial La2O3, Interface state density