[17p-F206-1~17] 13.3 Insulator technology

△ [17p-F206-9] Interface trap density of high-k gate stack using Flash Lamp Annealing (FLA) under NH₃ ambient

〇Kodai Shuto¹, Taiho Yoshinaka¹, Ryo Suemasa¹, Hikaru Kawarazaki², Takayuki Aoyama², Shinichi Kato², Yasuo Nara¹ (1.Univ. of Hyogo, 2.SCREEN Semiconductor Solutions Co.)

Keywords:high-k, Flash Lamp Annealing, Interface trap density

In order to improve the characteristics of high-k gate stack, Flash Lamp Annealing (FLA) under NH₃ ambient was performed, and the interface state density D_it before and after FLA was evaluated. As a result, D_it decreased as compared without FLA, and D_it decreased as the NH₃ concentration was increased.