The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[17p-F206-1~17] 13.3 Insulator technology

Sat. Mar 17, 2018 1:45 PM - 6:15 PM F206 (61-206)

Tomo Ueno(TUAT), Akio Ohta(Nagoya Univ.)

1:45 PM - 2:00 PM

[17p-F206-1] [Young Scientist Presentation Award Speech] Physical origins of slow traps for ALD high-k dielectrics on GeOx/Ge interfaces

Mengnan Ke1, Kimihiko Kato1, Mitsuru Takenaka1, Shinichi Takagi1 (1.Tokyo Univ.)

Keywords:Ge, slow trap density, semiconductor