Haruka Fujiwara

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Speaker, Author, Co-Author

Sat. Mar 17, 2018 1:45 PM - 6:15 PM F206 (61-206)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[17p-F206-1~17] 13.3 Insulator technology

3:15 PM - 3:30 PM

[17p-F206-7] Characteristic change of GeO ₂ / Ge interface by Hf-Post Metallization Annealing

〇Haruka Fujiwara¹, Yoshitaka Iwazaki¹, Tomo Ueno¹, Hiroshi Yamada¹, Mitaro Namiki¹ (1.Tokyo Univ. of Agri. & Tech)