The 65h JSAP Spring Meeting, 2018

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[17p-F206-1~17] 13.3 Insulator technology

Sat. Mar 17, 2018 1:45 PM - 6:15 PM F206 (61-206)

Tomo Ueno(TUAT), Akio Ohta(Nagoya Univ.)

5:15 PM - 5:30 PM

[17p-F206-14] On physical origin of ferroelectricity in wide concentration range of HfxZr1-xO2

〇Shigehisa Shibayama1, Tomonori Nishimura1, Shinji Migita2, Akira Toriumi1 (1.Univ. of Tokyo, 2.AIST)

Keywords:HfZrO2, ZrO2, ferroelectric