[17p-F206-1~17] 13.3 Insulator technology

▼ [17p-F206-16] Improvements of Remanent Polarization and Endurance Characteristics in Thin Ferroelectric Y-doped HfO₂

〇(DC)Xuan Tian¹, Shigehisa Shibayama¹, Tomonori Nishimura¹, Takeaki Yajima¹, Shinji Migita², Akira Toriumi¹ (1.Univ. of Tokyo, 2.AIST)

Keywords:Ferroelectric HfO2, Endurance property

In this work, we show thickness dependence of P_sw (P_sw=P_r⁺+P_r^-) in ferroelectric HfO₂ down to 3 nm. Although P_sw is sharply reduced below 8 nm with post deposition anneal (PDA), a large P_sw enhancement is achieved by post metallization anneal (PMA) down to 5 nm. Furthermore, a highly reliable cycling performance is reported in 5 nm ferroelectric HfO₂ with neither wake-up nor obvious fatigue to 10⁸ cycles.