[17p-F206-1~17] 13.3 絶縁膜技術

▼ [17p-F206-16] Improvements of Remanent Polarization and Endurance Characteristics in Thin Ferroelectric Y-doped HfO₂

〇(DC)Xuan Tian¹、Shigehisa Shibayama¹、Tomonori Nishimura¹、Takeaki Yajima¹、Shinji Migita²、Akira Toriumi¹ (1.Univ. of Tokyo、2.AIST)

キーワード：Ferroelectric HfO2, Endurance property

In this work, we show thickness dependence of P_sw (P_sw=P_r⁺+P_r^-) in ferroelectric HfO₂ down to 3 nm. Although P_sw is sharply reduced below 8 nm with post deposition anneal (PDA), a large P_sw enhancement is achieved by post metallization anneal (PMA) down to 5 nm. Furthermore, a highly reliable cycling performance is reported in 5 nm ferroelectric HfO₂ with neither wake-up nor obvious fatigue to 10⁸ cycles.