The 65h JSAP Spring Meeting, 2018

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[17p-F206-1~17] 13.3 Insulator technology

Sat. Mar 17, 2018 1:45 PM - 6:15 PM F206 (61-206)

Tomo Ueno(TUAT), Akio Ohta(Nagoya Univ.)

3:00 PM - 3:15 PM

[17p-F206-6] Infulence by the High-k layer to give GeO2/Ge interface characteristics

〇Shotaro Wachi1, Yoshitaka Iwasaki1, Tomo Ueno1, Yoshinori Kitahara1, Koji Yamada1, Mitaro Namiki1 (1.Tokyo Univ. of Agri.&Tech)

Keywords:Germanium