[17p-F210-1~14] 9.3 Nanoelectronics

[17p-F210-1] Fabrication of small tunnel junctions by means of shadow evaporation in combination with room-temperature ALD

〇Keisuke Kikkawa¹, Naoki Ito¹, Hiroki Konno², Yoshinao Mizukaki¹, Hiroshi Shimada¹, Kensaku Kanomata³, Humihiko Hirose³ (1.Grad school, UEC, 2.UEC, 3.Yamagata Univ.)

Keywords:Atomic layer deposition, tunnel junction, shadow evaporation

In this research, we introduce room-temperature Atomic Layer Deposition (ALD) as a new oxide film formation process in means of shadow evaporation to improve the yield and performance of devices and to expand the selectivity of electrode materials. First of all, in order to enable the process proposed in this research, a vacuum vapor deposition machine with a room temperature ALD mechanism was constructed. After checking whether the introduced room temperature ALD method could be reproduced using X-ray photoelectron spectroscopy, a small tunnel junction element was fabricated and evaluated from low temperature measurement.