[17p-F210-1~14] 9.3 Nanoelectronics

[17p-F210-11] Development of Thermally Robust Memory using Pt Nanogaps

〇Yasuhisa Naitoh¹, Takuya Abe², Kazuki Otsu², Toru Sumiya¹, Hisashi Shima¹, Hisashi Shima², Kazuhito Tsukagoshi³, Hiroyuki Akinaga¹ (1.AIST, 2.CIT, 3.NIMS)

Keywords:nanogap electrode, Non-Volatile Memory

High stable and non-volatile memory based on resistance switching which can be operated over 873K was realized using Pt nanogaps. Because conduction mechanisms of resistance states are tunneling, it can be expected that the memory is rarely depended on temperature. We investigated the temperature dependence of the memories from RT to 773K and discuss the application for thermal robust memory.