[17p-F214-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-F214-1] Low temperature Photoluminescence of GaAs grown at extremely high rate

〇Akinori Ubukata¹, Taketo Aihara², Hassanet Sodabanlu³, Ryuji Ohima², Takeyoshi Sugaya², Yoshiki Yano¹, Toshiya Tabuchi¹, Koh Matsumoto¹, Yoshiaki Nakano⁴, Masakazu Sugiyama³ (1.Taiyo Nippon Sanso Corp., 2.AIST, 3.RCAST, The Univ. of Tokyo, 4.School of Engineering, The Univ. of Tokyo)

Keywords:Photoluminescence, High growth rate, GaAs

Much effort has been devoted recently to reduce the cost of GaAs based solar cells including the epitaxy cost by metalorganic vapor phase epitaxy (MOVPE). In this presentation, we will describe the results of the growth of GaAs by MOVPE and low temperature photoluminescence (LTPL) of GaAs. The growth rate of GaAs was increased up tp 90 micron/h with an increase of TMG input. There was no significant diffierence in LTPL spectra of GaAs grown at 80 micron/h and different V/III ratio.