[17p-F214-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-F214-4] GaP Heteroepitaxy on Si(100) Substrate by MOVPE: Surface Analysis with in-situ RAS

〇Boram Kim¹, Oliver Supplie², Agnieszka Pasazuk², Thomas Hannappel², Yoshiaki Nakano¹, Masakazu Sugiyama¹ (1.Tokyo Univ., 2.TU Ilmenau)

Keywords:metal-organic vapor phase epitaxy, reflectance anisotropy spectrosopy, antiphase domain

GaP heteroepitaxial growth on double-stepped Si (100) substrate by metal-organic vapor phase epitaxy (MOVPE) was investigated. In-situ measurement with reflectance anisotropy spectroscopy (RAS) was applied during the entire process to monitor the transient surface states of Si and GaP. Double-layer step was formed on vicinal Si (100) surface under As ambient with annealing at 850C. The succeeding GaP layer was grown after the Si surface preparation. Reconstructed Si surface and grown GaP surface were analyzed by RA signal intensity, and the peak at critical points of Si and GaP was appeared. Strong RA intensity of double-layer stepped Si surface and P-rich GaP surface was measured. In this research, we could successfully get the GaP layer on double-layer stepped Si substrate.