[17p-F214-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-F214-5] GaP Heteroepitaxy on Si (100) Substrate by MOVPE: Effect of process parameters on Si surface reconstruction process

〇Tetsuaki Okada¹, Kim Boram¹, Oliver Supplie², Agnieszka Pasazuk², Thomas Hannappel², Yoshiaki Nakano¹, Masakazu Sugiyama¹ (1.Univ. Tokyo, 2.TU Ilmenau)

Keywords:metal organic vapor phase epitaxy, reflection anisotropy spectroscopy, double step layer

At the interface between the non-polar group IV substrate and the polar group III-V layer, dislocation derived from Antiphase Domain (APD) lowers device performance. Double-layer stepped substrate can be employed for suppressing APD. This research aims to optimize the conditon of Si(100) surface reconstruction prepared in metal organic chemical vapor deposition(MOCVD). In situ reflection anisotropy spectroscopy (RAS) was applied to evaluate the Si surface.