[17p-F214-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-F214-8] Stacking growth of emission-wavelength controlled InAs/GaAs quantum dots with AlGaAs barrier layers

〇Toshiyuki Kaizu^1,2, Takaaki Koike¹, Takashi Kita¹ (1.Faculty of Eng., Kobe Univ, 2.CSREA, Kobe Univ.)

Keywords:quantum dot, stacking growth, broadband emission