[17p-F214-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-F214-9] Photoluminescence of strain-engineered stacked InAs quantum dots

〇(M1)Mikihito Suzuki¹, Kenichi Shimomura¹, Itaru Kamiya¹ (1.Toyota Tech. inst.)

Keywords:InAs quantum dots, strain relaxation, electronic states

InAs quantum dots (QDs) have attracted attention as a new materials for light source particularly for optical telecommunications due to their high thermal stability and monochromaticity. Studies have been performed to relax the strain induced in the QDs in order to shift their quantized states to longer wavelengths by stacking the QD layers. However, the mechanisms of strain relaxation and its influence to the electronic states of QDs remains to be elucidated. In this report, we present results of photoluminescence spectroscopy used to probe the effect of strain relax in strain-engineered stacked InAs QDs.