[17p-F314-1~13] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[17p-F314-8] Fabrication and characterization of GaN/AlN polycrystalline superlattices grown on
Si (001) substrate by RF-MBE

〇Takeru Norikane¹, Yutaka Ogasawara¹, Kazuhiro Morishita¹, Mai Kunimitsu², Takashi Kuraoka², yuichi Fujisawa², Yusuke Yamashita², Changsu Kim³, Hidefumi Akiyama³, Yasuhiro Tanaka², Hayato Miyagawa², Syun Koshiba² (1.Grad. Sch., Kagawa Univ., 2.Kagawa Univ., 3.ISSP)

Keywords:superlattice, GaN/AlN, RF-MBE

GaN/AlN semiconductor superlattices attract much attention as ultra-violet light emitting materials. As for fabrication of the GaN/AlN superlattices on the low cost Si substrates, there are many reports of superlattices fabrication on Si(111) substrates, where formation of single crystal films are much easier. On the other hand, those on Si(001) substrates, where the symmetry of surface atomic arrangement is different, are quite few. In this study, We fabricated the GaN/AlN superlattices structures on Si(001) substrates by RF-MBE. The structural and optical properties were evaluated by X-ray diffraction (XRD) measurements and photo luminescence (PL) measurements. The XRD patterns have shown the satellite peaks, confirming the formation of superlattices structures. From the ±1st satellite peaks of XRD, the one-period thickness was estimated to be 17.67 nm. Reciprocal space mapping (RSM) shows spreading peaks to Q_x because of nm size columnar crystals formed on the surface. The PL measurement shows emission from the superlattices at room temperature.